Role of Metal Phthalocyanine in Redox Complex Conductivity of Polyaniline and Aniline Black

Author(s):  
FRANCIS P. XAVIER ◽  
ANTO REGIS INIGO ◽  
GEORGE J. GOLDSMITH

Polyaniline (PA) and aniline black (AB) were prepared in powder form by the chemical method of oxidative polymerization, from which free-standing thin films were obtained by solvent evaporation using N-methyl pyrrolidinone ( NMP ). The thin films contained 2, 4, 6 or 8 wt% AB. Electrical measurements showed that the samples containing 4% AB exhibited the highest photoconductivity of the four concentrations. Thus there appears to be a critical ratio of PA to AB for maximum photoconductivity. Annealing up to 570 K has little effect on the conductivity. Upon adding a small quantity of copper phthalocyanine ( CuPc ) to the PA + AB, the electrical conductivity increased considerably and the optical absorption was extended from the UV to the near IR. The electrical conductivity mechanism is a consequence of a redox process, since AB is the oxidized state of PA and, upon illumination, there is an exchange of charge carriers. The extension of the range of optical absorption upon addition of CuPc is interpreted to suggest that CuPc photosensitizes the material and enhances the carrier transport process in the redox couple. The activation energy from the temperature-dependent conductivity and the band gap from the electrolyte electroreflectance method were determined. The activation energy for 0.4% CuPc is lowest (0.52 eV) and the corresponding band gap is determined to be 3.0 eV. This organic compound could be a good candidate for inexpensive, reliable and efficient solar energy-converting devices.

1994 ◽  
Vol 369 ◽  
Author(s):  
C. Zhang ◽  
H. Deng ◽  
J. Varon ◽  
B. Abeles ◽  
Y. Yang ◽  
...  

AbstractThin film SrCo0.8Fe0.2O3-δ were made by pulse laser deposition. The electrical conductivity is thermally activated in the temperature 25-500 °C with an activation energy of 0.17-0.19 eV and is temperature independant from 500-800 °C. The optical absorption shows characteristic features which are interpreted qualitatively in terms of a simple band structure diagram.


2000 ◽  
Vol 14 (20) ◽  
pp. 733-742 ◽  
Author(s):  
ABDUL NAYEEM ◽  
G. VAJRALINGAM ◽  
K. YADAIAH ◽  
M. NAGABHOOSHANAM

Thin films of C d 1-x Zn xS solid solutions are grown by the chemical bath deposition method with 0≤x<1. The films are characterized by X-ray, optical and electrical measurements. X-ray studies have indicated that the films have polycrystalline nature. Optical studies have also shown that the films possess polycrystalline nature with tiny crystallites in the form of platelets. Electrical conductivity studies have revealed two activation energies in solid solutions for x≤0.2 and one activation energy value for x>0.2. The results are explained in terms of mixed hexagonal and cubic crystalline structures.


1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
A. A. Faremi ◽  
S. S. Oluyamo ◽  
O. Olubosede ◽  
I. O. Olusola ◽  
M. A. Adekoya ◽  
...  

Abstract In this paper, energy band gaps and electrical conductivity based on aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique, with graphite and carbon as cathode and anode, respectively. Synthesis is done at 353 K from an aqueous solution of analytical grade selenium dioxide (SeO2), and aluminum chloride (AlCl2·7H2O). Junctions-based Al2Se3 thin films from a controlled medium of pH 2.0 are deposited on fluorine-doped tin oxide (FTO) substrate using potential voltages varying from 1,000 mV to 1,400 mV and 3 minutes −15 minutes respectively. The films were characterized for optical properties and electrical conductivity using UV-vis and photoelectrochemical cells (PEC) spectroscopy. The PEC reveals a transition in the conduction of the films from p-type to n-type as the potential voltage varies. The energy band gap reduces from 3.2 eV to 2.9 eV with an increase in voltage and 3.3 eV to 2.7 eV with increase in time. These variations indicate successful fabrication of junction-based Al2Se3 thin films with noticeable transition in the conductivity type and energy band gap of the materials. Consequently, the fabricated Al2Se3 can find useful applications in optoelectronic devices.


2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.


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